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| TPCS8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPCS8303 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools * * * * * Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 15 m (typ.) High forward transfer admittance: |Yfs| = 18 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement mode: Vth = -0.45~-1.2 V (VDS = -10 V, ID = -200 A) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating -20 -20 12 -5 -20 1.1 W 0.75 Unit V V V A JEDEC JEITA TOSHIBA 2-3R1E Drain power dissipation Single-device value (t = 10 s) (Note 2a) at dual operation (Note 3b) Single-device Drain power operation (Note 3a) dissipation Single-device value (t = 10 s) (Note 2b) at dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Single-device operation (Note 3a) Weight: 0.035 g (typ.) 0.6 W 0.35 Circuit Configuration 8 7 6 5 16.3 -5 0.075 150 -55~150 mJ A mJ C C 1 2 3 4 Note 1, Note 2, Note 3, Note 4, Note 5: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 TPCS8303 Thermal Characteristics Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 114 C/W 167 Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) 208 C/W 357 Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b) Marking (Note 6) Part No. (or abbreviation code) S8303 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: a) Device mounted on a glass-epoxy board (a) FR-4 25.4 x 25.4 x 0.8 (unit: mm) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (unit: mm) (a) (b) Note 3: a) b) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.) Note 4: VDD = -16 V, Tch = 25C, L = 500H, IAR = -5A, RG = 25 Note 5: Repetitive rating: pulse width limited by max channel temperature Note 6: on lower right of the marking indicates Pin 1. Weekly code: (Three digits) Week of manufacture (01 for the first week of a year, sequential number up to 52 or 53) Year of manufacture (The last digit of a year) 2 2004-07-06 TPCS8303 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth Test Condition VGS = 10 V, VDS = 0 V VDS = -20 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 12 V VDS = -10 V, ID = -200 A VGS = -2.0 V, ID = -2.5 A Drain-source ON resistance RDS (ON) VGS = -2.5 V, ID = -2.5 A VGS = -4.5 V, ID = -2.5 A Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD -16 V,VGS = -5 V, ID = -5 A - |Yfs| Ciss Crss Coss tr VGS ton 0V -5 V 4.7 ID = -2.5 A VOUT RL = 4 VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = -10 V, ID = -2.5 A Min -20 -8 -0.45 9 Typ. 31 22 15 18 2560 330 380 5 14 42 142 33 10 5.4 Max 10 -10 -1.2 80 30 21 ns nC pF S m Unit A A V V VDD -10 V - Duty < 1%, tw = 10 s = Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = -5 A, VGS = 0 V Min Typ. Max -20 1.2 Unit A V 3 2004-07-06 TPCS8303 ID - VDS -5 -10 -5 -3 -2 -1.8 -1.7 Common source Ta = 25C, Pulse test -10 -10 -5 -3 -2 ID - VDS -1.9 -1.8 Common source Ta = 25C Pulse test Drain current ID (A) Drain current ID (A) -4 -8 -1.7 -6 -1.6 -4 -1.5 -2 VGS = -1.4 V -1.6 -3 -2 -1 -1.4 VGS = -1.3 V 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -12 -0.5 VDS - VGS Common source (V) Common source -10 VDS = -10 V Pulse test Ta = 25C -0.4 Pulse test Drain current ID (A) -8 -6 25 Ta = -55C Drain-source voltage 100 VDS -0.3 -0.2 -4 -2 -0.1 ID = -5 A -2.5 0 0 -1 -2 -3 0 0 -1.3 -4 -8 -12 -16 -20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID (S) 100 Ta = -55C 100 10 25 100 RDS (ON) - ID Forward transfer admittance |Yfs| Drain-source ON resistance RDS (ON) (m) VGS = -2 V -2.5 -4.5 10 1 Common source VDS = -10 V Pulse test 0.1 -0.1 -1 -10 -100 Common source Ta = 25C Pulse test 1 -0.1 -1 -10 -100 Drain current ID (A) Drain current ID (A) 4 2004-07-06 TPCS8303 RDS (ON) - Ta 60 -100 IDR - VDS (A) Drain reverse current IDR Common source Drain-source ON resistance RDS (ON) (m) 50 Pulse test ID = -5 A 40 -2.5 30 VGS = -2 V 20 VGS = -2.5 V ID = -5 A, -2.5 A, -1.3 A 10 VGS = -4.5 V 0 -80 -1.3 -10 -10 V -5 -3 -1 VGS = 0 V -1 Common source Ta = 25C Pulse test -0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 -40 0 40 80 120 160 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 -1.2 Vth - Ta Gate threshold voltage Vth (V) 3000 Ciss -1.0 (pF) 1000 Coss 300 Crss 100 Common source Ta = 25C 30 VGS = 0 V f = 1 MHz 10 -0.1 -0.3 -1 -3 -10 -30 -100 -0.8 Capacitance C -0.6 -0.4 Common source -0.2 VDS = -10 V ID = -200 A Pulse test 0 -80 -40 0 40 80 120 160 Ambient temperature Ta (C) Drain-source voltage VDS (V) PD - Ta 1.25 Dynamic input/output characteristics -20 Common source ID = -5 A Ta = 25C, Pulse test -8 (W) (V) Drain power dissipation PD VDS (3) 0.5 (4) 0.25 Drain-source voltage 0.75 (2) VDS -10 -8 -8 -4 -4 VDD = -16 V -2 VGS -5 -4 0 0 40 80 120 160 200 0 0 10 20 30 40 0 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2004-07-06 Gate-source voltage VGS 1.0 VDD = -16 V -15 -6 (V) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s TPCS8303 rth - tw 1000 500 (4) (3) (2) 100 50 30 (1) rth (C/W) Transient thermal impedance 300 10 5 3 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s 1 0.5 0.3 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width Safe operating area 100 Single-device value at dual operation (Note 3b) ID max (Pulse) * tw (s) Drain current ID (A) 1 ms * 10 10 ms * 1 * Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.1 1 VDSS max 10 0.1 0.1 Drain-source voltage VDS (V) 6 2004-07-06 TPCS8303 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2004-07-06 |
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